Characteristics of IGZO Thin Film Transistor Deposited by DC Magnetron Sputtering
نویسندگان
چکیده
منابع مشابه
AlNXOY THIN FILMS DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING
AlNxOy thin films were produced by DC reactive magnetron sputtering, using an atmosphere of argon and a reactive gas mixture of nitrogen and oxygen, for a wide range of partial pressures of reactive gas. During the deposition, the discharge current was kept constant and the discharge parameters were monitored. The deposition rate, chemical composition, morphology, structure and electrical resis...
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We have deposited weakly textured substoichiometric NbB2-x thin films by magnetron sputtering from a NbB2 target. The films exhibit superhardness (42 ± 4 GPa), previously only observed in overstoichiometric TiB2 thin films, and explained by a self-organized nanostructuring, where thin TiB2 columnar grains hinder nucleation and slip of dislocations and a B-rich tissue phase between the grains pr...
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The aim of this paper is to study the effect of substrate on the Cu3N thin films. At first Cu3N thin films are prepared using DC magnetron sputtering system. Then structural properties, surface roughness, and electrical resistance are studied using X-ray diffraction (XRD), the atomic force microscope (AFM) and four-point probe techniques respectively. Finally, the results are investigated and c...
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We present the study of the biocompatibility and surface properties of titanium dioxide (TiO₂) thin films deposited by direct current magnetron sputtering. These films are deposited on a quartz substrate at room temperature and annealed with different temperatures (100, 300, 500, 800 and 1100 °C). The biocompatibility of the TiO₂ thin films is analyzed using primary cultures of dorsal root gang...
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Transparent p-type semiconducting SrCu2O2 films have been deposited by RF magnetron sputtering under unbalanced bipolar pulsed DC bias on low-alkali glass substrates in a mixed gas of 1% H2/Ar below 400 degrees C. The pulsed DC bias voltages to substrate were varied from 0 V to -200 V with a frequency of 350 kHz. The effect of pulsed DC bias on the structure and electrical and optical propertie...
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ژورنال
عنوان ژورنال: Korean Journal of Materials Research
سال: 2009
ISSN: 1225-0562
DOI: 10.3740/mrsk.2009.19.1.024